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-rw-r--r--include/linux/mtd/mtd.h8
-rw-r--r--include/linux/mtd/nand.h121
-rw-r--r--include/linux/mtd/physmap.h2
-rw-r--r--include/linux/mtd/plat-ram.h4
-rw-r--r--include/linux/platform_data/elm.h2
5 files changed, 69 insertions, 68 deletions
diff --git a/include/linux/mtd/mtd.h b/include/linux/mtd/mtd.h
index f9ac2897b86b..a5cf4e8d6818 100644
--- a/include/linux/mtd/mtd.h
+++ b/include/linux/mtd/mtd.h
@@ -362,10 +362,10 @@ struct mtd_partition;
struct mtd_part_parser_data;
extern int mtd_device_parse_register(struct mtd_info *mtd,
- const char **part_probe_types,
- struct mtd_part_parser_data *parser_data,
- const struct mtd_partition *defparts,
- int defnr_parts);
+ const char * const *part_probe_types,
+ struct mtd_part_parser_data *parser_data,
+ const struct mtd_partition *defparts,
+ int defnr_parts);
#define mtd_device_register(master, parts, nr_parts) \
mtd_device_parse_register(master, NULL, NULL, parts, nr_parts)
extern int mtd_device_unregister(struct mtd_info *master);
diff --git a/include/linux/mtd/nand.h b/include/linux/mtd/nand.h
index ef52d9c91459..ab6363443ce8 100644
--- a/include/linux/mtd/nand.h
+++ b/include/linux/mtd/nand.h
@@ -86,7 +86,6 @@ extern int nand_unlock(struct mtd_info *mtd, loff_t ofs, uint64_t len);
#define NAND_CMD_READOOB 0x50
#define NAND_CMD_ERASE1 0x60
#define NAND_CMD_STATUS 0x70
-#define NAND_CMD_STATUS_MULTI 0x71
#define NAND_CMD_SEQIN 0x80
#define NAND_CMD_RNDIN 0x85
#define NAND_CMD_READID 0x90
@@ -105,25 +104,6 @@ extern int nand_unlock(struct mtd_info *mtd, loff_t ofs, uint64_t len);
#define NAND_CMD_RNDOUTSTART 0xE0
#define NAND_CMD_CACHEDPROG 0x15
-/* Extended commands for AG-AND device */
-/*
- * Note: the command for NAND_CMD_DEPLETE1 is really 0x00 but
- * there is no way to distinguish that from NAND_CMD_READ0
- * until the remaining sequence of commands has been completed
- * so add a high order bit and mask it off in the command.
- */
-#define NAND_CMD_DEPLETE1 0x100
-#define NAND_CMD_DEPLETE2 0x38
-#define NAND_CMD_STATUS_MULTI 0x71
-#define NAND_CMD_STATUS_ERROR 0x72
-/* multi-bank error status (banks 0-3) */
-#define NAND_CMD_STATUS_ERROR0 0x73
-#define NAND_CMD_STATUS_ERROR1 0x74
-#define NAND_CMD_STATUS_ERROR2 0x75
-#define NAND_CMD_STATUS_ERROR3 0x76
-#define NAND_CMD_STATUS_RESET 0x7f
-#define NAND_CMD_STATUS_CLEAR 0xff
-
#define NAND_CMD_NONE -1
/* Status bits */
@@ -165,28 +145,8 @@ typedef enum {
*/
/* Buswidth is 16 bit */
#define NAND_BUSWIDTH_16 0x00000002
-/* Device supports partial programming without padding */
-#define NAND_NO_PADDING 0x00000004
/* Chip has cache program function */
#define NAND_CACHEPRG 0x00000008
-/* Chip has copy back function */
-#define NAND_COPYBACK 0x00000010
-/*
- * AND Chip which has 4 banks and a confusing page / block
- * assignment. See Renesas datasheet for further information.
- */
-#define NAND_IS_AND 0x00000020
-/*
- * Chip has a array of 4 pages which can be read without
- * additional ready /busy waits.
- */
-#define NAND_4PAGE_ARRAY 0x00000040
-/*
- * Chip requires that BBT is periodically rewritten to prevent
- * bits from adjacent blocks from 'leaking' in altering data.
- * This happens with the Renesas AG-AND chips, possibly others.
- */
-#define BBT_AUTO_REFRESH 0x00000080
/*
* Chip requires ready check on read (for auto-incremented sequential read).
* True only for small page devices; large page devices do not support
@@ -207,13 +167,10 @@ typedef enum {
#define NAND_SUBPAGE_READ 0x00001000
/* Options valid for Samsung large page devices */
-#define NAND_SAMSUNG_LP_OPTIONS \
- (NAND_NO_PADDING | NAND_CACHEPRG | NAND_COPYBACK)
+#define NAND_SAMSUNG_LP_OPTIONS NAND_CACHEPRG
/* Macros to identify the above */
-#define NAND_MUST_PAD(chip) (!(chip->options & NAND_NO_PADDING))
#define NAND_HAS_CACHEPROG(chip) ((chip->options & NAND_CACHEPRG))
-#define NAND_HAS_COPYBACK(chip) ((chip->options & NAND_COPYBACK))
#define NAND_HAS_SUBPAGE_READ(chip) ((chip->options & NAND_SUBPAGE_READ))
/* Non chip related options */
@@ -361,6 +318,7 @@ struct nand_hw_control {
* any single ECC step, 0 if bitflips uncorrectable, -EIO hw error
* @read_subpage: function to read parts of the page covered by ECC;
* returns same as read_page()
+ * @write_subpage: function to write parts of the page covered by ECC.
* @write_page: function to write a page according to the ECC generator
* requirements.
* @write_oob_raw: function to write chip OOB data without ECC
@@ -392,6 +350,9 @@ struct nand_ecc_ctrl {
uint8_t *buf, int oob_required, int page);
int (*read_subpage)(struct mtd_info *mtd, struct nand_chip *chip,
uint32_t offs, uint32_t len, uint8_t *buf);
+ int (*write_subpage)(struct mtd_info *mtd, struct nand_chip *chip,
+ uint32_t offset, uint32_t data_len,
+ const uint8_t *data_buf, int oob_required);
int (*write_page)(struct mtd_info *mtd, struct nand_chip *chip,
const uint8_t *buf, int oob_required);
int (*write_oob_raw)(struct mtd_info *mtd, struct nand_chip *chip,
@@ -527,8 +488,8 @@ struct nand_chip {
int (*errstat)(struct mtd_info *mtd, struct nand_chip *this, int state,
int status, int page);
int (*write_page)(struct mtd_info *mtd, struct nand_chip *chip,
- const uint8_t *buf, int oob_required, int page,
- int cached, int raw);
+ uint32_t offset, int data_len, const uint8_t *buf,
+ int oob_required, int page, int cached, int raw);
int (*onfi_set_features)(struct mtd_info *mtd, struct nand_chip *chip,
int feature_addr, uint8_t *subfeature_para);
int (*onfi_get_features)(struct mtd_info *mtd, struct nand_chip *chip,
@@ -589,25 +550,65 @@ struct nand_chip {
#define NAND_MFR_MACRONIX 0xc2
#define NAND_MFR_EON 0x92
+/* The maximum expected count of bytes in the NAND ID sequence */
+#define NAND_MAX_ID_LEN 8
+
+/*
+ * A helper for defining older NAND chips where the second ID byte fully
+ * defined the chip, including the geometry (chip size, eraseblock size, page
+ * size). All these chips have 512 bytes NAND page size.
+ */
+#define LEGACY_ID_NAND(nm, devid, chipsz, erasesz, opts) \
+ { .name = (nm), {{ .dev_id = (devid) }}, .pagesize = 512, \
+ .chipsize = (chipsz), .erasesize = (erasesz), .options = (opts) }
+
+/*
+ * A helper for defining newer chips which report their page size and
+ * eraseblock size via the extended ID bytes.
+ *
+ * The real difference between LEGACY_ID_NAND and EXTENDED_ID_NAND is that with
+ * EXTENDED_ID_NAND, manufacturers overloaded the same device ID so that the
+ * device ID now only represented a particular total chip size (and voltage,
+ * buswidth), and the page size, eraseblock size, and OOB size could vary while
+ * using the same device ID.
+ */
+#define EXTENDED_ID_NAND(nm, devid, chipsz, opts) \
+ { .name = (nm), {{ .dev_id = (devid) }}, .chipsize = (chipsz), \
+ .options = (opts) }
+
/**
* struct nand_flash_dev - NAND Flash Device ID Structure
- * @name: Identify the device type
- * @id: device ID code
- * @pagesize: Pagesize in bytes. Either 256 or 512 or 0
- * If the pagesize is 0, then the real pagesize
- * and the eraseize are determined from the
- * extended id bytes in the chip
- * @erasesize: Size of an erase block in the flash device.
- * @chipsize: Total chipsize in Mega Bytes
- * @options: Bitfield to store chip relevant options
+ * @name: a human-readable name of the NAND chip
+ * @dev_id: the device ID (the second byte of the full chip ID array)
+ * @mfr_id: manufecturer ID part of the full chip ID array (refers the same
+ * memory address as @id[0])
+ * @dev_id: device ID part of the full chip ID array (refers the same memory
+ * address as @id[1])
+ * @id: full device ID array
+ * @pagesize: size of the NAND page in bytes; if 0, then the real page size (as
+ * well as the eraseblock size) is determined from the extended NAND
+ * chip ID array)
+ * @chipsize: total chip size in MiB
+ * @erasesize: eraseblock size in bytes (determined from the extended ID if 0)
+ * @options: stores various chip bit options
+ * @id_len: The valid length of the @id.
+ * @oobsize: OOB size
*/
struct nand_flash_dev {
char *name;
- int id;
- unsigned long pagesize;
- unsigned long chipsize;
- unsigned long erasesize;
- unsigned long options;
+ union {
+ struct {
+ uint8_t mfr_id;
+ uint8_t dev_id;
+ };
+ uint8_t id[NAND_MAX_ID_LEN];
+ };
+ unsigned int pagesize;
+ unsigned int chipsize;
+ unsigned int erasesize;
+ unsigned int options;
+ uint16_t id_len;
+ uint16_t oobsize;
};
/**
diff --git a/include/linux/mtd/physmap.h b/include/linux/mtd/physmap.h
index d2887e76b7f6..aa6a2633c2da 100644
--- a/include/linux/mtd/physmap.h
+++ b/include/linux/mtd/physmap.h
@@ -30,7 +30,7 @@ struct physmap_flash_data {
unsigned int pfow_base;
char *probe_type;
struct mtd_partition *parts;
- const char **part_probe_types;
+ const char * const *part_probe_types;
};
#endif /* __LINUX_MTD_PHYSMAP__ */
diff --git a/include/linux/mtd/plat-ram.h b/include/linux/mtd/plat-ram.h
index e07890aff1cf..44212d65aa97 100644
--- a/include/linux/mtd/plat-ram.h
+++ b/include/linux/mtd/plat-ram.h
@@ -20,8 +20,8 @@
struct platdata_mtd_ram {
const char *mapname;
- const char **map_probes;
- const char **probes;
+ const char * const *map_probes;
+ const char * const *probes;
struct mtd_partition *partitions;
int nr_partitions;
int bankwidth;
diff --git a/include/linux/platform_data/elm.h b/include/linux/platform_data/elm.h
index 1bd5244d1dcd..bf0a83b7ed9d 100644
--- a/include/linux/platform_data/elm.h
+++ b/include/linux/platform_data/elm.h
@@ -50,5 +50,5 @@ struct elm_errorvec {
void elm_decode_bch_error_page(struct device *dev, u8 *ecc_calc,
struct elm_errorvec *err_vec);
-void elm_config(struct device *dev, enum bch_ecc bch_type);
+int elm_config(struct device *dev, enum bch_ecc bch_type);
#endif /* __ELM_H */
generated by cgit v1.2.3 (git 2.39.0) at 2024-12-24 10:34:17 +0300